Data of High-Performance Self-Powered PEC Photodetectors Based on 2D BiVO4/MXene Schottky Junction

However, short absorption wavelength range, low efficiency of visible light utilization, and low responsivity remain challenges for performance improvements.

Here, the PEC photodetectors based on the 2D BiVO4/MXene Schottky junction structure, which shows excellent performance with high photocurrent density (≈3.90 mA cm−2 at 0 VSCE under AM 1.5 G, 150 mW cm−2), good responsivity (790.2 mA W−1 under 447 nm), fast response time (tr/tf = 8/14 ms), and long-term stability (keep 17 000 s and 22 000 cycles) are fabricated. These can be attributed to the built-in electric field at the BiVO4/MXene Schottky junction interface, which accelerates the transfer of photogenerated electrons and holes, and inhibits interfacial charge recombination.