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Data · dataset · 2026

The data of the article “A Study on the Effects of Pressure and Rotation Speed on the Growth Rate and Uniformity of SiC in a Vertical Hot-Wall CVD Epitaxial System”

Listed in ScienceDB

This dataset is a numerical simulation data that supports the conclusions and charts of the paper "The Influence of Pressure and Speed on the Growth Rate and Uniformity of Vertical Hot Wall CVD Epitaxial SiC".

Description

It includes core data such as SiC epitaxial growth rate, thickness uniformity, reactant molar concentration, and flow field temperature distribution under different reaction chamber pressures (50-450 mbar) and substrate speeds (0-1000 rpm). 

Links

Where it is published

Catalogue records · 1

Topics

Inferred from text
Simulation 75%
Provenance · 1 source records, 11 field assertions
SourceKeyLast seenRaw
ScienceDB10.57760/sciencedb.jim.0002710 d agoJSON v1
FieldAssertionExtractorEvidence
access_levelsource · scidb cnconnector:scidb_cn@1.0.0
concepts[field].local:field:earth-environmentalmapping · scidb cnconnector:scidb_cn@1.0.0
concepts[field].local:field:engineeringmapping · scidb cnconnector:scidb_cn@1.0.0
concepts[field].local:field:humanitiesmapping · scidb cnconnector:scidb_cn@1.0.0
concepts[field].local:field:life-sciencesmapping · scidb cnconnector:scidb_cn@1.0.0
concepts[field].local:field:social-sciencemapping · scidb cnconnector:scidb_cn@1.0.0
concepts[method].local:method:simulationenrichment · scidb cnkeyword-concept-rules@1.0.0title+description (75%)
descriptionsource · scidb cnconnector:scidb_cn@1.0.0/metadata/dc/description
licensesource · scidb cnconnector:scidb_cn@1.0.0/metadata/dc/rights
publication_datesource · scidb cnconnector:scidb_cn@1.0.0
titlesource · scidb cnconnector:scidb_cn@1.0.0/metadata/dc/title