Dataset for Effect of Subthreshold Slope on the Sensitivity of Nanoribbon Sensors

Polysilicon nanoribbon sensors are fabricated with a wide range of subthreshold slopes and the sensitivity is characterized using pH measurements. It is shown that there is a strong relationship between the sensitivity and the device subthreshold slope.

The sensitivity is characterized using the current sensitivity per pH, which is shown to increase from 1.2% to 33.6% as the subthreshold slope improves from 6.2 V/dec to 0.23 V/dec respectively. We propose a model that relates current sensitivity per pH to the subthreshold slope of the sensing transistor. The model shows that sensitivity is determined only on the sub-threshold slope of the sensing transistor and the choice of gate insulator.