Data for Anodic oxidations : excellent process durability and surface passivation for high efficiency silicon solar cells

We show that a room temperature anodic oxidation can achieve a thickness of ~70 nm within ~30 min, comparable to the growth rate of a thermal oxide at 1000 °C. We demonstrate that anodic SiO2 films can mask against wet chemical silicon etching and high temperature phosphorus diffusions, thereby permitting a low thermal budget method to form patterned structures.

We investigate the saturation current density J0 of anodic SiO2/silicon nitride stacks on phosphorus diffused and undiffused silicon and show that a J0 of <10 fA cm−2 can be achieved in both cases. Finally, to showcase the anodic SiO2 films on a device level, we employed the anodic SiO2/silicon nitride stack to passivate the rear surface of an interdigitated back contact solar cell, achieving an efficiency of 23.8%.<br><br>-->Software required Microsoft Excel --> Organisation One sheet per figure containing the data used in the related paper -->Nature of the data Captions to the figures are given in the paper.