An inventory dataset of GeSe/WSe2 mixed dimensional p-n junction

The researches of heterojunction devices with different combinations of 2D materials are fundamental and necessary to advance the development of photodetection. In this work, GeSe/WSe2 mixed-dimension p-n heterojunction devices consisting of WSe2 2D materials (n-type) and GeSe films (p-type) are prepared.

Important photoelectronic parameters of the p-n heterojunction, such as photoresponsivity, specific detectivity and epitaxial quantum efficiency have been obtained.  This dataset includes: (1) the Atomic Force Microscope test data of the WSe2 and GeSe in the heterojunction; (2) Raman spectra and PL spectra data of the WSe2 and GeSe; (3) the photoelectric test data, including the I-V characteristic curve, data on the evolution of photoresponsivity as a function of laser excitation power density, and data on the optical switching behavior.