Data for Interfacial oxides for charge control of hafnium oxide surface passivation of silicon

Without the inclusion of an ALD-grown silicon oxide interlayer, high-resolution transmission electron microscopy reveals the existence of a ∼2 nm thick silicon oxide layer between the hafnium oxide and the silicon before and after a 450 °C activation anneal.

The thickness of the silicon oxide interlayer is increased with the intentional deposition of silicon oxide by plasma-enhanced ALD (up to 33 nm). By increasing the thickness of silicon oxide, we demonstrate control of the stack's passivating properties, finding an inverse relationship between interlayer thickness and passivation level. Corona charging experiments demonstrate a reduction in the net negative charge density (from −1012 q cm−2 to −1011 q cm−2) with increasing interlayer thickness.