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Data · dataset · 2026

Experimental test dataset of two trench MOSFET devices under Kr ion irradiation.

Listed in ScienceDB

This article provides the dataset accompanying the paper titled " Comparative Study of Single-Event Leakage Current Effects in Double-Trench and Asymmetric-Trench SiC MOSFETs Under 84Kr Heavy-Ion Irradiation".

Description

The dataset includes the experimental test data for two trench devices under 84Kr ion irradiation, corresponding to Fig. 2 to 6 in the paper, and is intended to support the reproduction of the results presented in these figures.

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Where it is published

Catalogue records · 1

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Provenance · 1 source records, 10 field assertions
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ScienceDB10.57760/sciencedb.3170210 d agoJSON v1
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access_levelsource · scidb cnconnector:scidb_cn@1.0.0
concepts[field].local:field:earth-environmentalmapping · scidb cnconnector:scidb_cn@1.0.0
concepts[field].local:field:engineeringmapping · scidb cnconnector:scidb_cn@1.0.0
concepts[field].local:field:humanitiesmapping · scidb cnconnector:scidb_cn@1.0.0
concepts[field].local:field:life-sciencesmapping · scidb cnconnector:scidb_cn@1.0.0
concepts[field].local:field:social-sciencemapping · scidb cnconnector:scidb_cn@1.0.0
descriptionsource · scidb cnconnector:scidb_cn@1.0.0/metadata/dc/description
license_textsource · scidb cnconnector:scidb_cn@1.0.0
publication_datesource · scidb cnconnector:scidb_cn@1.0.0
titlesource · scidb cnconnector:scidb_cn@1.0.0/metadata/dc/title