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Text · dataset · 2025

Prognostics of Power MOSFET

Listed in NASA Data Portal

This paper demonstrates how to apply prognostics to power MOSFETs (metal oxide field effect transistor).

Description

The methodology uses thermal cycling to age devices and Gaussian process regression to perform prognostics. The approach is validated with experiments on 100V power MOSFETs.

The failure mechanism for the stress conditions is determined to be die-attachment degradation. Change in ON-state resistance is used as a precursor of failure due to its dependence on junction temperature. The experimental data is augmented with a finite element analysis simulation that is based on a two-transistor model.

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The simulation assists in the interpretation of the degradation phenomena and SOA (safe operation area) change.

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Inferred from text
Simulation 75%
Provenance · 1 source records, 7 field assertions
SourceKeyLast seenRaw
NASA Data Portalb8783ed5-e9f3-4594-af97-4c8925b7814910 d agoJSON v1
FieldAssertionExtractorEvidence
concepts[method].local:method:simulationenrichment · data nasa govkeyword-concept-rules@1.0.0title+description (75%)
created_datesource · data nasa govconnector:data_nasa_gov@1.0.0
descriptionsource · data nasa govconnector:data_nasa_gov@1.0.0/notes
license_textsource · data nasa govconnector:data_nasa_gov@1.0.0
publication_datesource · data nasa govconnector:data_nasa_gov@1.0.0
titlesource · data nasa govconnector:data_nasa_gov@1.0.0/title
updated_datesource · data nasa govconnector:data_nasa_gov@1.0.0