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Data · dataset · 2026

The Effect of Displacement Defects on Single-Event Burnout in p-GaN HEMTs

Listed in ScienceDB

This dataset contains the Single-Event Burnout (SEB) data for p-GaN HEMTs devices.

Description

It includes the SEB data for pristine device, gamma-ray pre-irradiated device, and 22 MeV carbon ion pre-irradiated device. The data demonstrates the suppressive effect of displacement defects on SEB in p-GaN HEMTs devices.

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Where it is published

Catalogue records · 1

Topics

Provenance · 1 source records, 10 field assertions
SourceKeyLast seenRaw
ScienceDB10.57760/sciencedb.4400810 d agoJSON v1
FieldAssertionExtractorEvidence
access_levelsource · scidb cnconnector:scidb_cn@1.0.0
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concepts[field].local:field:life-sciencesmapping · scidb cnconnector:scidb_cn@1.0.0
concepts[field].local:field:social-sciencemapping · scidb cnconnector:scidb_cn@1.0.0
descriptionsource · scidb cnconnector:scidb_cn@1.0.0/metadata/dc/description
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publication_datesource · scidb cnconnector:scidb_cn@1.0.0
titlesource · scidb cnconnector:scidb_cn@1.0.0/metadata/dc/title