Weak localization and electron-phonon interaction in layered Zintl phase SrIn2P2 single crystal

Here, we report systematic electrical transport studies on the unstrained layered SrIn2P2 single crystals. The resistance presents a minimum value around Tc = 136 K and then increases remarkably at low temperature.

Distinct negative magnetoresistance below Tc, combined with the anomalous resistance, implies the carriers are weak localized at low temperature due to strong quantum coherence. Further analysis based on three-dimensional weak localization (WL) model suggests that the electron-phonon interaction dominates the phase decoherence process. Moreover, Hall measurements indicate that the transport properties are mainly dominated by hole-type carriers, and the WL effect is obviously affected by the carrier transport.