Data for Non-radiative step facets in semiconductor nanowires

Here we show that there is a class of step facets that are stable in nanowires, with no long-range strain field or dislocation character. In zinc-blende semiconductors, they take the form of Ʃ3 (112) facets with heights constrained to be a multiple of three {111} monolayers.

Density functional theory calculations show that they act as non-radiative recombination centres and have deleterious effects on nanowire properties. We present experimental observations of these defects on twin boundaries and twins that terminate inside GaAsP nanowires and find that they are indeed always multiples of three monolayers in height. Strategies to use the three-monolayer rule during growth to prevent their formation are discussed.<br><br>Experimental data underpinning article and relating to fitures 1, 2, 3a, 3b, 4.