Voltage-amplitude controlled evolution of resistive switching in Ag/AZO/MnO2/FTO memristor

The dataset is organized into three parts:1. XPS characterization data: High-resolution X-ray photoelectron spectroscopy (XPS) spectra of the device, including survey scans and core-level spectra of Ag, O, and Mn elements, used to analyze the chemical states and elemental composition of the device.2.

I–V characteristics under varying voltage amplitudes: Resistive switching current-voltage (I-V) curves measured under different voltage sweep ranges, demonstrating the transition from analog to digital memristive behavior as the voltage amplitude increases.3. Temperature-dependent memristive performance: The I-V characteristic curves measured at different ambient temperatures (298 K to 453 K) are used to evaluate the thermal stability, temperature modulation characteristics and analyze the physical mechanism of the devices.All electrical data were collected by CHI660e, and the raw data are stored in bin format, including complete measurement parameters and results.