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Data · dataset · 2026

Supplement Number 1

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The supplementary material contains an AFM image of the β-Ga2O3 surface (Fig. S1), SEM morphology of the etched fin (Fig. S2), f-dependent G/ω-V characteristics of MOSCAPs and the Dit extracted using the Hill-Coleman method (Figs.S3(a)-(c)).

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Condensed matter physics 68% · Image 75%
Provenance · 1 source records, 9 field assertions
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