Synthesis of Gallium Nitride and Related Oxides Via Ammonobasic Reactive Sublimation (ARS)

Results indicate that GaN growth occurs by a nitriding process of Ga and related oxides, establishing a direct dependence on NH4OH amount added as a primary chemical reactive. The samples were grown on p-type Si (111) substrates inside a tube furnace, employing GaN powder and NH4OH.

The characterizations of the samples were carried out by XRD, SEM, EDS and PL techniques, revealing the influence of NH4OH on the improvement of GaN synthesis and the enhancement of its optical and structural properties.