Data for Growth and characterisation of MnSb (0001) / InGaAs (111) A epitaxial films

The Sb and (In,Ga)Sb inclusions are epitaxial, while MnAs in- clusions are endotaxial, i.e. all have a crytallographic relationship to the substrate and epilayer. MBE optimisation towards different device struc- tures is discussed along with results from a two-stage growth scheme.<br><br>Data folder consists of 12 comma separated variable (csv) files containing out-of-plane symmetric diffraction data recorded at the University of Warwick using K-Alpha1 radiation (wavelength 1.5405980 Å).

These files are in reciprocal space co-ordinate format i.e. recorded X-ray intensity Vs Qz (Å^-1). The growth conditions of each sample is noted in the file naming system in the format 'Jvalue-Tsub_Qz', where Jvalue is the flux ratio and Tsub is the substrate temperature in degrees celsius (°C) . For three of the files the prefix '2S_' is used to denote that these samples were grown with the 2-stage growth method.