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Data · dataset · 2024

The effect of proton irradiation on GaN HEMT

Listed in ScienceDB

Proton irradiation can cause degradation of the electrical characteristics of GaN HEMT devices.

Description

Proton irradiation experiments were conducted to obtain the influence of different energies and doses of protons on the electrical characteristics of GaN HEMT devices

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Catalogue records · 1

Topics

Provenance · 1 source records, 10 field assertions
SourceKeyLast seenRaw
ScienceDB10.57760/sciencedb.space.0148811 d agoJSON v1
FieldAssertionExtractorEvidence
access_levelsource · scidb cnconnector:scidb_cn@1.0.0
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concepts[field].local:field:engineeringmapping · scidb cnconnector:scidb_cn@1.0.0
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concepts[field].local:field:life-sciencesmapping · scidb cnconnector:scidb_cn@1.0.0
concepts[field].local:field:social-sciencemapping · scidb cnconnector:scidb_cn@1.0.0
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titlesource · scidb cnconnector:scidb_cn@1.0.0/metadata/dc/title