Data for paper: Avalanche breakdown characteristics of Al1-xGaxAsSb quaternary alloys

There are two types of files: -.PNG, which corresponds to the figures -.CSV, which are raw data in figures The work in this paper mainly focus on the experiments to accurately determine avalanche breakdown characteristics of Al 1-x Ga x As 0.56 Sb 0.44 for x = 0 to 0.15.

The test structures were p-i-n diodes with 100 nm avalanche layers to maximize usefulness of the results for high bandwidth APDs. In addition, due to a lack of experimental reports, this work included experimental confirmation of minimum bandgaps, E g , of Al 1-x Ga x As 0.56 Sb 0.44 . The data consists of results from Al 1-x Ga x As 0.56 Sb 0.44 avalanche photodiodes ( x = 0 to 0.15): photoresponse, dark current, capacitance, bandgap, avalanche gain and breakdown voltage.