Data for paper: Thin Al1-xGaxAs0.56Sb0.44 diodes with low excess noise

The files correspond to experimental results in paper: " Thin Al 1- x Ga x As 0.56 Sb 0.44 diodes with low excess noise" published in IEEE Journal of Selected Topics in Quantum Electronics (Volume: 24, Issue: 2, March-April 2018), DOI: doi.org/10.1109/JSTQE.2017.2725441 There are two types of files:- .png, which correspond to the figures- .csv, which are raw data in figures This work reports the excess noise characterization in a series of Al 1- x Ga x As 0.56 Sb 0.44 ( x = 0, 0.05, 0.1, 0.15) diodes with avalanche layer thickness of 110-116 nm.

The data consists of results from Al 1- x Ga x As 0.56 Sb 0.44 ( x = 0, 0.05, 0.1, 0.15) photodiodes: dark and photocurrent, capacitance, avalanche gain, excess noise.