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Precursor Parameter Identification for IGBT Prognostics

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Precursor parameters have been identified to enable development of a prognostic approach for insulated gate bipolar transistors (IGBT).

Description

The IGBT were subjected to thermal over- stress tests using a transistor test board until device latch-up. The collector-emitter current, transistor case temperature, transient and steady state gate voltages, and transient and steady state collector-emitter voltages were monitored in-situ during the test.

Pre- and post-aging characterization tests were performed on the IGBT. The aged parts were observed to have shifts in capaci- tance-voltage (C-V) measurements as a result of trapped charge in the gate oxide. The collector-emitter ON voltage V ce(on) showed a reduction with aging.

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The reduction in the V ce(on) was found to be correlated to die attach degradation, as observed by scan- ning acoustic microscopy (SAM) analysis. The collector-emitter voltage, and transistor turn-off time were observed to be precursor parameters to latch-up. The monitoring of these precursor param- eters will enable the development of a prognostic methodology for IGBT failure.

The prognostic methodology will involve trending precursor data, and using physics of failure models for prediction of the remaining useful life of these devices.

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Inferred from text
Microscopy 75%
Provenance · 1 source records, 7 field assertions
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NASA Data Portal9f1a6de5-dc83-4cf2-950e-a424cf8d05b912 d agoJSON v1
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descriptionsource · data nasa govconnector:data_nasa_gov@1.0.0/notes
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