Effects of 60Co gamma irradiation on three-dimensional Interconnection Structures Based on Through– Silicon via

However, with the widespread application of 3-D integrated microsystem technology in spacecraft, there is little work available on the radiation reliability of TSV. In this paper, the total ionizing dose (TID) effect of customized TSV test chips are studied by using the irradiation of 60Co gamma.

The experimental results show that signal reflection coefficient (S11) increases and signal transmission coefficient (S21) decreases with the increase of cumulative dose. Furthermore, the metal-oxide-semiconductor (MOS) capacitance of interdigital electrode TSV structure decreases after gamma-ray irradiation. We propose that gamma-ray irradiation induced trap charges in the oxide layer causes the decrease of parasitic capacitance within TSV structure, resulting in the variation of characteristic impedance of TSV signal channel.