Structure · dataset · 2019
Al-doping and Properties of AZO Thin Films Grown at Room Temperature: Sputtering Pressure Effect
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Aluminum zinc oxide (AZO) thin films were synthesized on glass substrates by radio frequency (rf) magnetron sputtering from a metallic Zn-Al (5 at. %) target at room temperature.
Description
The morphological, structural, electrical and optical properties of the films were studied as a function of the sputtering pressure, which was varied from 0.1 to 6.7 Pa. X-ray diffraction (XRD) analyses revealed that the films obtained were polycrystalline, having a hexagonal wurtzite structure with a preferential orientation in the (002) plane.
In addition, the crystallite size increased as a function of sputtering pressure. Owing to the re-sputtering of the Zn atoms from the growing film, the aluminum concentration presented a maximum value of 13 at. %. At pressures close to 0.16 Pa, we obtained films with values of electrical resistivity and mobility of 2.8 10-3 Ω cm and 17 cm2/Vs, respectively.
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Finally, our results indicate that the structure zone diagram proposed by Thornton and later modified by Kluth does not fully predict the structural/morphological behavior of the AZO films, since plasma interactions must also be taken into account. With the methodology used, transparent conductive electrodes can be deposited on substrates at low temperatures.
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- Repository landing page scielo.figshare.com/articles/Al-doping_and_Properties_of_AZO_Thin_Films_Grown_at_R… ↗
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- DOI doi.org/10.6084/m9.figshare.8127779.v1 ↗
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- Creative Commons Attribution 4.0 International creativecommons.org/licenses/by/4.0/legalcode ↗
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- IsSupplementTo 10.1590/1980-5373-mr-2018-0665 doi.org/10.1590/1980-5373-mr-2018-0665 ↗
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- DataCite API api.datacite.org/dois/10.6084/m9.figshare.8127779.v1 ↗
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Topics
- Stated by source
- Chemical engineering · Materials engineering
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| Source | Key | Last seen | Raw |
|---|---|---|---|
| DataCite | 10.6084/m9.figshare.8127779.v1 | 12 d ago | JSON v1 |
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