Data · dataset · 2018
Data for: Influence on Curvature Induced Stress to the Flatband Voltage and Interface Density of 4H-SiC MOS Structure
Listed in Teesside University Research Data Repository
The data details including the followings.
Description
Figure 1. C-V characteristics of n-type 4H-SiC (0001) MOS capacitor.
Figure 2. The relationship between curvature and Vfb. Figure 3.
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Interface defect state density (Dit) as a function of energy level below the conduction band of SiC, estimated by the C-ψs method, measured at room . Figure 4. The relationship between curvature and Dit @Ec-E=0.2eV.
Figure 5. Infrared spectra of thermally grown SiO2. Figure 6.
Change of LO wavenumbers with curvature.
Links
Where it is published
- DOI doi.org/10.17632/ms5nxv5px3.1 ↗
DOI / persistent id · from researchdata tees ac uk
Catalogue records · 1
- OAI-PMH record data.mendeley.com/oai?verb=GetRecord&metadataPrefix=oai_dc&identifier=oai%3Adata… ↗
metadata API · from researchdata tees ac uk
Topics
- From keywords
- Earth & Environmental Science
Provenance · 1 source records, 5 field assertions
| Source | Key | Last seen | Raw |
|---|---|---|---|
| Teesside University Research Data Repository | oai:data.mendeley.com/ms5nxv5px3.1 | 17 h ago | JSON v1 |
| Field | Assertion | Extractor | Evidence |
|---|---|---|---|
| concepts[field].local:field:earth-environmental | mapping · researchdata tees ac uk | connector:researchdata_tees_ac_uk@1.0.0 | |
| description | source · researchdata tees ac uk | connector:researchdata_tees_ac_uk@1.0.0 | /metadata/dc/description |
| license_text | source · researchdata tees ac uk | connector:researchdata_tees_ac_uk@1.0.0 | |
| publication_date | source · researchdata tees ac uk | connector:researchdata_tees_ac_uk@1.0.0 | |
| title | source · researchdata tees ac uk | connector:researchdata_tees_ac_uk@1.0.0 | /metadata/dc/title |