Data for Activation of Al2O3 surface passivation of silicon: separating bulk and surface effects

This study aims to understand the competing bulk and surface lifetime effects which occur during the activation of atomic layer deposited Al2O3. We demonstrate that maximum passivation is achieved on n- and p-type silicon with activation at ∼ 450 °C, irrespective of annealing ambient.

Upon stripping the Al2O3 films and re-passivating the surface using a superacid-based technique, we find the bulk lifetime of float-zone and Czochralski silicon wafers degrade at annealing temperatures > 450 °C. By accounting for this bulk lifetime degradation, we demonstrate that the chemical passivation component associated with Al2O3 remains stable at activation temperatures of 450─500 °C, achieving an SRV of < 1 cm/s on n- and p-type silicon.