Learning the electronic density of states in condensed matter

We find that the performance of the model depends crucially on the resolution chosen to smooth the DOS and that there is a tradeoff to be made between the systematic error associated with the smoothing and the error in the ML model for a specific structure. We find however that the errors are not strongly correlated among similar structures, and so the average DOS over an ensemble of configurations is in very good agreement with the reference electronic structure calculations, despite the large nominal error on individual configurations.

We demonstrate the usefulness of this approach by computing the density of states of a large amorphous silicon sample, for which it would be prohibitively expensive to compute the DOS by direct electronic structure calculations and show how the atom-centered decomposition of the DOS that is obtained through our model can be used to extract physical insights into the connections between structural and electronic features.