Electro-thermal simulation data for inter-tier heat coupling and service-time degradation in stacked BEOL IGZO transistors

The data are organised in five folders. Simulation decks contains the Sentaurus structure scripts, device command files, parameter files and the Python post-processing scripts used to extract temperature profiles and fit slopes. Extracted data contains ten CSV tables holding every numerical result in the associated article: the single-device temperature rise against interlayer conductivity for four interconnect terminations; the victim channel temperature and lateral field against position with the neighbour active and idle; two-tier coupling against boundary case, interlayer thickness and conductivity; the package-referenced validation case; isothermal transfer characteristics on a grid of six temperatures and eight generated-donor densities for a deep and a shallow donor species; the threshold-voltage temperature coefficient and retention activation energy extracted from those grids; bias-stress lifetime ratios for three activation energies and two time exponents; and retention against read temperature at five service times.

Figures contains the eight published figures as vector PDF and 600 dpi PNG, together with the Python scripts and the single data module that generate them, so that any figure can be reproduced without a simulator. Literature search contains nine Lens.org query exports covering 191 records across six keyword blocks, which support the novelty statement in the article. Documentation contains the full working record of the study, including simulation conditions, intermediate results, diagnostic steps and the corrections made during the work, and a map from each claim in the article to its source file.