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Electron rapping materials, due to their exceptional ability of energy storage and controllable photo release under external stimulation, have attracted coherent attention in the field of optical information storage (OIS) In this work, Gd3Al3Ga2O12: Ce3+, Yb3+fluorescence ceramics, were developed using air and vacuum sintering technology By co copying Ce3+and Yb3+, the trap density was significantly increased by 7.5 times compared to samples containing only Ce3+ Vacuum annexing further enhanced trap density by 1.6 times compared to samples alone in air, while generating deep traps (1.44 eV), making Gd3Al3Ga2O12: Ce3+, Yb3+an excellent OIS medium This work is expected to facilitate the development of OIS materials