Structure · dataset · 2017
Figures in paper 'Temperature dependence of the band gap of zinc nitride observed in photoluminescence measurements'
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The figures included here are related to the publication: "Temperature dependence of the band gap of zinc nitride observed in photoluminescence measurements".
Description
Appl. Phys.
Lett. 111, 122105 (2017); doi: dx.doi.org/10.1063/1.4997153 The study reported in this paper was funded by the EPSRC (Fund code EP/M507611/1) and Johnson Matthey PLC. The financial support by these parties is highly appreciated. Figure 1: XRD pattern of a sample grown at 150 °C. Inset: SEM image of the same sample.
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Figure 2: Temperature dependent PL of a sample shortly after growth. The excitation power for these measurements was set to 30 mW. Figure 3: (a) Temperature dependent PL of the zinc nitride sample after prolonged exposure to ambient.
(b) Comparison of the high-energy bands of the same sample before (solid) and after (dashed) prolonged exposure to ambient. Figure 4: PL spectra of bands A and B at (a) 3.7 and (b) 294 K at different excitation powers. (c) Peak intensities and (d) emission energies of band A at 294 K (●) and bands A (▼) and B (▲) at 3.7 K as a function of excitation power.
The spectra in (a) have been normalised at the maximum intensity of band A. Figure 5: Temperature dependence of (a) relative integrated intensities (I/I0) and (b) the emission energies of band A at an excitation power of 100 mW (●) and bands A (▼) and B (▲) at an excitation power of 1 mW.
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Topics
- Stated by source
- Chemical sciences · Materials engineering
- Inferred from text
- Image 75%
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