Cross-Temperature Threshold-Voltage Distribution Dataset for 3D TLC NAND Flash Memory

Threshold-voltage distributions were collected under different programming and read-temperature conditions. The distributions were processed to extract characteristic parameters for different programmed states and word-line locations, which were further used to analyze the temperature coefficient (Tco) and its dependence on NAND Flash states and physical locations.

The dataset supports the modeling and validation of a read-reference-voltage compensation method for improving cross-temperature read reliability in 3D TLC NAND Flash memory. The corresponding results are reported in the paper “Model-Based Read-Reference-Voltage Compensation for Cross-Temperature Reliability in 3D TLC NAND Flash Memory.”