Design of a broadband Si3N4 waveguide amplifier based on gain medium of ion sliced Titanium-doped sapphire

However, the use of current Ti:Sapphire laser is severely limited by its large size, high cost and high pump power. Here, we design a Si3N4 on-chip broadband optical waveguide amplifier based on ion sliced Ti:Sapphire gain medium, with an ultra-wide bandwidth of 650 - 900 nm and peak gain of 28 dB.

The finite difference method is used to optimize the characteristic parameters of the waveguide by combining the optical field limiting factor with the effective mode area to improve its gain performance. The device is designed to control the target thickness of Ti:Sapphire to 1 µm by using ion cutting technology, with Γs reaching nearly 80%. The obtained on-chip amplifier has the advantages of miniaturization, cost reduction and scalability.