Investigation of data retention in hafnium-based ferroelectric memory devices

This dataset contains the original current-voltage (I-V) characterization data of hafnium-based ferroelectric memory devices with an initial downward polarization, after being held for 1000 s at three temperatures of 25 °C, 85 °C and 125 °C. All data were collected by a Keysight B1530 semiconductor parameter analyzer and stored in MATLAB (.mat) format. The polarization-voltage (P-V) hysteresis loops can be obtained by performing time integration on the measured current data, which is adopted to investigate the imprint effect of ferroelectric memories during high-temperature retention.