Structure · dataset · 2018
Kinetics of Vacancy Doping in SrTiO3 Studied by in situ Electrical Resistivity
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The kinetics of annealing to transform stoichiometric SrTiO3 insulator into a vacancy-doped semiconductor-superconductor was revisited by in situ electrical resistivity measurements.
Description
SrTiO3 single crystals were grown by Floating Zone Method. Using a homemade apparatus several electrical resistivity as a function of time were measured at different temperatures, which allows one to study the creation of vacancies during annealing under vacuum.
The activation energy for the oxygen vacancies formation/charge doping in SrTiO3 was estimated as 1.4±0.3 eV using solid-state kinetics approach.
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- Repository landing page scielo.figshare.com/articles/Kinetics_of_Vacancy_Doping_in_SrTiO3_Studied_by_in_si… ↗
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- DOI doi.org/10.6084/m9.figshare.6317921 ↗
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Documentation and papers
- Creative Commons Attribution 4.0 International creativecommons.org/licenses/by/4.0/legalcode ↗
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- IsSupplementTo 10.1590/1980-5373-mr-2017-0887 doi.org/10.1590/1980-5373-mr-2017-0887 ↗
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- DataCite API api.datacite.org/dois/10.6084/m9.figshare.6317921 ↗
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- DataCite Commons commons.datacite.org/doi.org/10.6084/m9.figshare.6317921 ↗
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Topics
- Stated by source
- Chemical engineering · Materials engineering
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Provenance · 1 source records, 10 field assertions
| Source | Key | Last seen | Raw |
|---|---|---|---|
| DataCite | 10.6084/m9.figshare.6317921 | 12 d ago | JSON v1 |
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