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Data · dataset · 2026

High-efficiency phosphorus activation in Ge0.95Sn0.05 enabled by ion implantation and flash lamp annealing with preserved alloy integrity

Listed in RODARE

Origin and excel files used for data processing and visualisation of the different characterisation techniques performed (Raman, RBS, XRD, Hall Effect) of the processed GeSn material.

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Catalogue records · 1

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Engineering
Provenance · 1 source records, 7 field assertions
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RODARE500314 d agoJSON v1
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access_levelsource · rodare hzdr deconnector:rodare_hzdr_de@1.0.0
concepts[field].local:field:engineeringmapping · rodare hzdr deconnector:rodare_hzdr_de@1.0.0
descriptionsource · rodare hzdr deconnector:rodare_hzdr_de@1.0.0/metadata/description
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titlesource · rodare hzdr deconnector:rodare_hzdr_de@1.0.0/metadata/title
updated_datesource · rodare hzdr deconnector:rodare_hzdr_de@1.0.0