Semiconductor quantum dots as nanoelectronic circuit components

Phase of the output relative to the input as a function of frequency is also recorded to have some insight into the observed low-pass filter characteristics of the as-fabricated devices. The as-fabricated quantum dot devices are found to have all the characteristics of a classical low -pass filter with optimization of gain, phase shift and cut-off frequency in the band-gap range of ‘2.5–2.6’ eV.

The as-fabricated devices are tested for demodulation and satisfactory operation is obtained. This suggests for employing such nanoscale devices in the field of communications.