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Data · dataset · 2026

Proton-Induced Gate Oxide Degradation and Threshold Voltage Instability of IGBTs Under HV-H3TRB Stress

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Proton-Induced Gate Oxide Degradation and Threshold Voltage Instability of IGBTs Under HV-H3TRB Stress

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Provenance · 1 source records, 10 field assertions
SourceKeyLast seenRaw
ScienceDB10.57760/sciencedb.440418 d agoJSON v1
FieldAssertionExtractorEvidence
access_levelsource · scidb cnconnector:scidb_cn@1.0.0
concepts[field].local:field:earth-environmentalmapping · scidb cnconnector:scidb_cn@1.0.0
concepts[field].local:field:engineeringmapping · scidb cnconnector:scidb_cn@1.0.0
concepts[field].local:field:humanitiesmapping · scidb cnconnector:scidb_cn@1.0.0
concepts[field].local:field:life-sciencesmapping · scidb cnconnector:scidb_cn@1.0.0
concepts[field].local:field:social-sciencemapping · scidb cnconnector:scidb_cn@1.0.0
descriptionsource · scidb cnconnector:scidb_cn@1.0.0/metadata/dc/description
license_textsource · scidb cnconnector:scidb_cn@1.0.0
publication_datesource · scidb cnconnector:scidb_cn@1.0.0
titlesource · scidb cnconnector:scidb_cn@1.0.0/metadata/dc/title