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Archive · dataset · 2025

Insulated-Gate Bipolar Transistor (IGBT) Accelerated Aging

Listed in NASA Data Portal

Preliminary data from thermal overstress accelerated aging using the aging and characterization system.

Description

The data set contains aging data from 6 devices, one device aged with DC gate bias and the rest aged with a squared signal gate bias. Several variables are recorded and, in some cases, high-speed measurements of gate voltage, collector-emitter voltage, and collector current are available.

The data set is provided by the NASA Prognostics Center of Excellence (PCoE).

Links

Provenance · 1 source records, 6 field assertions
SourceKeyLast seenRaw
NASA Data Portalde64e3d3-2731-474c-bc0b-cfe56e567a3611 d agoJSON v1
FieldAssertionExtractorEvidence
created_datesource · data nasa govconnector:data_nasa_gov@1.0.0
descriptionsource · data nasa govconnector:data_nasa_gov@1.0.0/notes
license_textsource · data nasa govconnector:data_nasa_gov@1.0.0
publication_datesource · data nasa govconnector:data_nasa_gov@1.0.0
titlesource · data nasa govconnector:data_nasa_gov@1.0.0/title
updated_datesource · data nasa govconnector:data_nasa_gov@1.0.0