Dataset for Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar (11-22) and Non-Polar (11-20) GaN Nanorods

However, very limited studies of nanotexturing via dry etching have been performed, in comparison to wet etching. In the paper associated with this dataset, we investigate the formation and morphology of semi-polar (11-22) and non-polar (11-20) GaN nanorods using inductively coupled plasma (ICP) etching.

The impact of gas chemistry, pressure, temperature, radio-frequency (RF) and ICP power and time are explored. The scanning electron microscopy images contained in this dataset indicate that a chemical component of the etch process is found to have a significant impact on the morphology, being impacted by the polarity of the planes. In contrast, the images show that increasing the physical component enables the impact of crystal orientation to be minimized to achieve a circular nanorod profile with inclined sidewalls.