Acoustoelectrically enhanced acousto-optic modulation in an integrated silicon nitride and thin film lithium niobate platform

Acoustoelectric interactions in piezoelectric-semiconductor heterostructures allow the propagation characteristics of microwave frequency phonons in piezoelectric media to be controlled and radically enhanced, providing electrically controllable phonon gain, large velocity tuning, isolation, and circulation, as well as extremely large electron-mediated phononic nonlinearities. Here, for the first time, we create such a piezoelectric-semiconductor heterostructure with lithium-niobate-on-insulator and InGaAs that also supports guided optical modes through the addition of a silicon nitride waveguide and modification of the acoustic materials to provide an optical lower cladding.

We use this new architecture to demonstrate acoustoelectrically enhanced acousto-optic modulation, where 1 GHz phonons are piezoelectrically generated and acoustoelectrically amplified on-chip by up to 60 dB before impinging on the optical waveguide, providing pure phase modulation with a $V_πL$ figure-of-merit of 0.077 V-cm while only consuming 3.77 mW of DC electrical power to provide the amplification. We then consider future applications enabled by these functionalities and describe a novel tunable optical delay and an optoelectronic oscillator (OEO) analog---an acoustoelectrically enhanced opto-acoustic oscillator (AE-OAO).