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Table · dataset · 2020

Data for Atomic level termination for passivation and functionalisation of silicon surfaces

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Chemical treatments play an essential role in the formation of high quality interfaces between materials, including in semiconductor devices, and in the functionalisation of surfaces.

Description

We have investigated the effects of hydrogen and fluorine termination of (100)-orientation silicon surfaces over a range of length scales. At the centimetre scale, lifetime measurements show clean silicon surfaces can be temporarily passivated by a short treatment in both HF(2%) : HCl(2%) and HF(50%) solutions.

The lifetime, and hence surface passivation, becomes better with immersion time in the former, and worse with immersion time in the latter. At the nanometre scale, X-ray photoelectron spectroscopy and atomic force microscopy show treatment with strong HF solutions results in a roughened fluorine-terminated surface. Subsequent superacid-derived surface passivation on different chemically treated surfaces shows considerably better passivation on surfaces treated with HF(2%) : HCl(2%) compared to HF.

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Lifetime data are modelled to understand the termination in terms of chemical and field effect passivation at the centimetre scale. Surfaces passivated with Al2O3 grown by atomic layer deposition behave similarly when either HF(2%) : HCl(2%) or HF(50%) are used as a pre-treatment, possibly because of the thin silicon dioxide interlayer which subsequently forms. Our study highlights that chemical pre-treatments can be extremely important in the creation of high quality functionalised surfaces.<br><br>Data record consists of an excel spreadsheet containing the raw data and an accompanying readme file.

Captions to the figures are given in the paper. Abbreviations, variables and methods used are defined in the paper.

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Inferred from text
Microscopy 75% · Physical chemistry 70%
Provenance · 1 source records, 18 field assertions
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